TN0205A/ad vishay siliconix new product document number: 70868 s-58611erev. a, 19-jul-99 www.siliconix.com faxback 408-970-5600 1 n-channel 20-v mosfet
v ds (v) r ds(on) ( ) i d (ma) 20 2.0 @ v gs = 4.5 v 250 20 2.5 @ v gs = 2.5 v 150 low on-resistance: 2.0 w low threshold: 0.9 v (typ) fast switching speed: 35 ns 2.5-v or lower operation ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, display, memories battery operated systems solid state relay load/power switching-cell phones, pda sot-363 sc-70 (6-leads) s 1 1 3 g 1 2 d 2 6 4 5 d 1 g 2 s 2 order number: TN0205Ad sot-323 sc-70 (3-leads) s d 1 2 3 g order number: TN0205A
parameter symbol TN0205A TN0205Ad unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 250 a continuous drain current (t j = 150 c) a t a = 70 c i d 200 ma pulsed drain current i dm 500 maximum power dissipation a t a = 25 c p d 0.15 0.20 (total) w maximum power dissipation a t a = 70 c p d 0.10 0.13 (total) w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol TN0205A TN0205Ad unit maximum junction-to-ambient a r thja 833 625 (total) c/w notes a. surface mounted on fr4 board, t 10 sec.
TN0205A/ad vishay siliconix new product www.siliconix.com faxback 408-970-5600 2 document number: 70868 06-may-99
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 10 a 20 24 v gate-threshold voltage v gs(th) v ds = v gs , i d = 50 a 0.4 0.9 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 2 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 0.001 100 na zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 5 a on - state drain current a i d(on) v ds = 5.0 v, v gs = 2.5 v 120 160 ma on - state drain current a i d(on) v ds = 8.0 v, v gs = 4.5 v 400 800 ma drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 150 ma 1.6 2.5 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 250 ma 1.2 2.0 forward transconductance a g fs v ds = 2.5 v, i d = 50 ma 200 ms diode forward voltage a v sd i s = 50 ma, v gs = 0 v 0.7 1.2 v dynamic total gate charge q g v 5 0 v v 4 5 v i 100 a 350 450 c gate-source charge q gs v ds = 5.0 v, v gs = 4.5 v, i d = 100 ma 25 pc gate-drain charge q gd 100 input capacitance c iss v50vv0vf1mh 20 f output capacitance c oss v ds = 5.0 v, v gs = 0 v, f = 1 mhz 14 pf reverse transfer capacitance c rss 5 switching b, c turn-on delay time t d(on) v 3 0 v r 100 7 12 rise time t r v dd = 3.0 v, r l = 100 i 0 25 a v 4 5 v r 10 25 35 ns turn-off delay time t d(off) dd , l i d = 0.25 a, v gen = 4.5 v, r g = 10 19 30 ns fall time t f 9 15 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. for design only, not subject to production testing. c. switching time is essentially independent of operating temperature.
TN0205A/ad vishay siliconix new product document number: 70868 06-may-99 www.siliconix.com faxback 408-970-5600 3
0 0.2 0.4 0.6 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 01234 0 0.25 0.50 0.75 1.00 1.25 01234 0 2 4 6 8 10 0 100 200 300 400 500 600 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 25 c t c = 55 c c rss c oss v ds = 6 v i d = 100 ma v gs = 4.5 v i d = 100 m a v gs = 4.5 v v gs = 2.5 v 2 v 125 c 2.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (pc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) 3 v v gs = 3.5 thru 5 v 1.5 v 1 v 0 10 20 30 40 50 0 4 8 12 16 20 c iss
TN0205A/ad vishay siliconix new product www.siliconix.com faxback 408-970-5600 4 document number: 70868 06-may-99
0.4 0.3 0.2 0.1 0.0 0.1 0.2 50 25 0 25 50 75 100 125 150 i d = 50 a 1.2 0 2 4 6 8 0246810 0.001 3 i d = 250 ma 0.00 0.3 0.9 t j = 25 c t j = 125 c threshold voltage variance (v) v gs(th) t j temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s 0.1 0.01 1 0.6 t j = 55 c
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